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    • 专利摘要:
    There is provided a chemical-mechanical polishing felt containing a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product, comprising: an isocyanate-terminated urethane prepolymer having from 2 to 6.5 wt% of unreacted NCO groups; and, a hardener system, comprising: at least 5% by weight of a difunctional hardener; at least 5% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; and from 25 to 90% by weight of a high molecular weight polyol curing agent having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule. Methods for making and using the chemical mechanical polishing felt are also provided.
    公开号:FR3019075A1
    申请号:FR1552548
    申请日:2015-03-26
    公开日:2015-10-02
    发明作者:Bainian Qian；Marty Degroot
    申请人:Rohm and Haas Electronic Materials CMP Holdings Inc；Dow Global Technologies LLC；Rohm and Haas Electronic Materials LLC；
    IPC主号:
    专利说明:

    [0001] The present invention relates to a chemical mechanical polishing felt with a limit point detection window. The present invention also relates to a method for mechanical-chemical polishing of a substrate using a chemical mechanical polishing felt with a limit point detection window. In the manufacture of integrated circuits and other electronic devices, multiple layers of conductive, semiconductive and dielectric materials are deposited on or removed from a surface of a semiconductor wafer. Thin layers of conductive, semiconductor, and dielectric materials can be deposited by many deposition techniques. Conventional deposition techniques in modern processing include physical vapor deposition (PVD), also known as sputtering, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), and electrochemical plating (ECP). When layers of materials are successively deposited and removed, the upper surface of the slab becomes non-planar. Since the subsequent processing of the semiconductor (eg metallization) requires the wafer to have a flat surface, the wafer must be planarized. Planarization is useful for removing unwanted surface topography and surface defects, such as rough surfaces, agglomerated materials, crystal lattice deterioration, scratches, and polluted layers or materials.
    [0002] Mechano-chemical planarization, or mechano-chemical polishing (CMP), is a conventional technique used to planarize substrates, such as semiconductor wafers. In a conventional CMP, a wafer is attached to a support assembly and is positioned in contact with a polishing felt in a CMP apparatus. The support assembly provides the wafer with controllable pressure compressing it against the polishing felt. The felt is moved (e.g., rotated) relative to the wafer by an external control force. A polishing medium (e.g. a suspension) is simultaneously provided between the wafer and the polishing felt. The wafer surface is thus polished and made flat by the chemical and mechanical action of the surface of the felt and the polishing medium.
    [0003] A challenge presented by chemical mechanical polishing is the determination of when the substrate has been polished to the desired extent. In situ processes for determining the polishing endpoints have been developed. In situ limiting point optical techniques can be classified into two basic categories: (1) control of the reflected optical signal at a single wavelength or (2) control of the reflected optical signal from lengths of d multiple waves. Typical wavelengths used for the optical determination of the limiting point include those of the visible spectrum (for example from 400 to 700 nm), the ultraviolet spectrum (315 to 400 nm), and the infrared spectrum (for example 700 at 1000 nm). In U.S. Patent 5,433,651, Lustig et al. have described a single-wavelength polymer end point detection method in which light from a laser source is transmitted on a wafer surface and the reflected signal is monitored. When the composition on the wafer surface changes from one metal to another, the reflection coefficient varies. This variation of the reflection coefficient is then used to detect the polishing end point. In U.S. Patent 6,106,662, Bibby et al. described the use of a spectrometer to obtain a spectrum of intensity of light reflected in the visible light range of the optical spectrum. In metal CMP applications, Bibby et al. cite the use of the entire spectrum to detect the polishing end point. Mechano-chemical polishing felts with windows have been developed to adapt these optical end point determination techniques. Roberts describes, for example, in U.S. Patent 5,605,760 a polishing felt in which at least a portion of the felt is transparent to laser light over a wavelength range. Roberts teaches in some of the disclosed embodiments a polishing felt that includes a transparent window piece in an otherwise opaque felt. The window piece may be a transparent polymer bar or plug in a molded polishing felt. The bar or plug can be inserted in the molded state into the polishing felt (ie an "integral window"), or it can be installed in a cutout in the polishing felt after the operation molding (ie a "plug-in-place window").
    [0004] Aliphatic isocyanate-based polyurethane materials, such as those disclosed in U.S. Patent 6,984,163, have provided improved light transmission over a broad spectrum of light. The necessary durability required for demanding polishing applications is unfortunately lacking in these aliphatic polyurethane windows, inter alfa. Conventional polymer-based endpoint detection windows often exhibit undesirable degradation upon exposure to light having a length of 330 to 425 nm. There is, however, increasing pressure to use light with shorter wavelengths for endpoint detection purposes in semiconductor polishing applications to facilitate thinner layers of materials and smaller device sizes. In addition, semiconductor devices are becoming increasingly complex with finer aspects and more layers of metallization. This trend requires improved performance for polishing consumables in order to maintain planarity and limit polishing defects. These may create breaks or short circuits in the conductive lines that would render the semiconductor device non-functional. It is generally known that one approach to reduce polishing defects, such as micro scratches or machining marks, is to use a softer polishing layer material. There is therefore a trend towards using softer polishing layer materials to facilitate improved defectivity performance. Nevertheless, conventional window formulations do not adapt well to such softer polishing layer materials, tending to increase polishing defectivity. There is therefore a continuing need for improved polymeric endpoint window formulations for use in mechano-chemical polishing felts. In particular, there is a continuing need for endpoint detection window formulations of polymers having a hardness <50 Shore D, coupled with elongation at break <400%; wherein the window formulations do not exhibit undesirable window deformation and exhibit the durability required for demanding polishing applications. The present invention provides a chemical mechanical polishing felt, comprising: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product, comprising: an isocyanate-terminated urethane prepolymer having from 2 to 6.5 wt% of unreacted NCO groups; and, a hardener system, comprising: at least 5% by weight of a difunctional hardener; at least 5% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; and from 25 to 90% by weight of a high molecular weight polyol hardener having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule. The present invention provides a chemical mechanical polishing felt, comprising: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product, comprising: an isocyanate-terminated urethane prepolymer having from 2 to 6.5 wt% of unreacted NCO groups; and, a hardener system, comprising: at least 5% by weight of a difunctional hardener; at least 5% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; and from 25 to 90% by weight of a high molecular weight polyol hardener having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule; wherein the polishing surface is adapted to polish a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate, and a semiconductor substrate. In a particular embodiment, the polishing surface has a pattern of heliocidal grooves formed therein. The present invention provides a mechano-chemical polishing felt, comprising: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product, comprising: an isocyanate-terminated urethane prepolymer having from 2 to 6.5% by weight of unreacted NCO groups, and a hardener system, comprising: at least 5% by weight of a difunctional hardener; at least 5% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least 3 hydroxyl groups per molecule; and from 25 to 90% by weight of a high molecular weight polyol hardener having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule; wherein the hardener system has a plurality of reactive hydrogen groups and the isocyanate-terminated urethane prepolymer has a plurality of unreacted NCO groups; and wherein a stoichiometric ratio of reactive hydrogen groups to unreacted NCO groups is 0.7 to 1.2. The present invention features a chemical mechanical polishing felt, comprising: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product, comprising: an isocyanate-terminated urethane prepolymer having from 2 to 6.5 wt% of unreacted NCO groups; and, a hardener system, comprising: at least 5% by weight of a difunctional hardener; at least 5% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least 3 hydroxyl groups per molecule; and from 25 to 90% by weight of a high molecular weight polyol hardener having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule; wherein the limit point detection window has a density 1 g / cm3; porosity less than 0.1% by volume; a Shore D hardness of 10 to 50; elongation at break <400%; and a double pass transmission at 800 nm from 30 to 100 ° h. The present invention provides a chemical mechanical polishing felt, comprising: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product, comprising: an isocyanate-terminated urethane prepolymer having from 2 to 6.5 wt% of unreacted NCO groups; and, a hardener system, comprising: at least 5% by weight of a difunctional hardener; at least 5% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; and from 25 to 90% by weight of a high molecular weight polyol hardener having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule; wherein the limit point detection window has a density of _k 1 g / cm3; porosity less than 0.1% by volume; a Shore D hardness of 10 to 50; elongation at break <400%; a double pass transmission at 800 nm from 30 to 100%; and, a double pass transmission at 400 nm from 25 to 100%.
    [0005] The present invention provides a method of manufacturing a chemical mechanical polishing felt of the present invention, comprising: providing a polishing layer having a polishing surface; providing an isocyanate-terminated urethane prepolymer having from 2 to 6.5% by weight of unreacted NCO groups; providing a hardener system, comprising: at least 5% by weight of a difunctional aromatic hardener; at least 5% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least 3 hydroxyl groups per molecule; from 25 to 90% by weight of a high molecular weight polyol hardener having a number average molecular weight, MN of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule; combining the isocyanate-terminated urethane prepolymer and the hardener system to form a combination; let it react from the combination to form a product; forming a limit point detection window from the product; assembling the limit point detection window to the polishing layer to provide a chemical mechanical polishing felt. In a particular embodiment, the limit point detection window is an integral window.
    [0006] The present invention provides a method of polishing a substrate, comprising: providing a chemical-mechanical polishing apparatus having a disk, a light source and a photosensor; providing at least one substrate; providing a chemical mechanical polishing felt of the present invention; the installation on the disk (or platinum) of the chemical-mechanical polishing felt; optionally, providing a polishing medium at an interface between the polishing surface and the substrate; creating a dynamic contact between the polishing surface and the substrate, wherein at least a certain amount of material is removed from the substrate; and, determining a polishing boundary point by transmitting light from the light source through the boundary point detection window and analyzing the light reflected from the surface of the substrate back through the limit point detection window incident on the photosensor. In a particular embodiment, the at least one substrate is selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate. DETAILED DESCRIPTION The chemical mechanical polishing felt of the present invention has a limit point detection window comprising the reaction product of a single set of ingredients, which reaction product has a unique combination of low hardness (it is ie Shore D <50) to provide low defect polishing performance and low tensile elongation (i.e. elongation at break 5. 400%) coupled with good optical properties (e.g. that is, a double pass transmission at 800 nm, DPT800,> 30%) to facilitate detection of the polishing end point; wherein the boundary detection window formulation does not exhibit undesirable window deformation (i.e. excessive bulge) and has the durability required for demanding polishing applications. The term "polishing medium" as used herein and in the appended claims includes polishing solutions containing particles and polishing solutions that do not contain particles, such as reactive and abrasive-free liquid polishing solutions.
    [0007] The term "double pass transmission" or "DPT" as used herein and in the appended claims with reference to a limit point detection window is determined using the following equation: DPT = (IW51-IWD) (IAsi - IAD) where IW51, IWD, IAsi, and IAD are measured using a Verity SP2006, Spectral Interferometer including an SD1024F spectrograph, a xenon flash lamp, and a 3mm optical fiber cable by placing a surface emitting light from the cable of optical fiber of 3 mm against (and perpendicular to) a first face of the limit point detection window at a point of origin, directing the light through the thickness, Tw, of the window and measuring at point of origin the intensity of the light reflected back through the thickness of the window, Tw, from a surface disposed against a second face of the limit point detection window substantially parallel to the first face; where IWsi is a measure of the light intensity that passes through the window from the point of origin and is reflected from the surface of a silicon control wafer placed against a second face of the window back through the window to the point of origin; where IWD 20 is a measure of the intensity of light that passes from the point of origin through the window and is reflected from the surface of a black body and back through the window to the point d origin; where IA51 is a measure of the intensity of light passing from the point of origin through an air thickness equivalent to the thickness, Tw, of the endpoint detection window, which is reflected from the surface of a silicon control wafer placed perpendicular to the light emitting surface of the 3 mm optical fiber cable and which is reflected back through the air thickness to the point of origin; and, where IAD is a measure of the intensity of light reflected from a black body on the light emitting surface of the 3 mm optical fiber cable. The term "DPT400" as used herein and in the appended claims is TPD presented by a limit point detection window for light having a wavelength of 400 nm.
    [0008] The term "DPT800" as used herein and in the appended claims is TPD presented by a limit point detection window for light having a wavelength of 800 nm. The chemical mechanical polishing felt of the present invention comprises: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product, comprising: an isocyanate-terminated urethane prepolymer having from 2 to 6.5 wt% (preferably from 3 to 6 wt%; still more preferably 5 to 6% by weight, most preferably 5.5 to 6% by weight of unreacted NCO groups; and a hardener system comprising: at least 5% by weight (preferably 5 to 70% by weight, more preferably 10 to 60% by weight, more preferably 20 to 40% by weight), a difunctional hardener; at least 15% by weight (preferably 5 to 25% by weight, more preferably 5 to 20% by weight, most preferably 5 to 15% by weight) of an amine initiated polyol curative having at least one nitrogen atom (preferably one to four nitrogen atoms, still more preferably two to four nitrogen atoms, still more preferably two nitrogen atoms) per molecule and an average of at least three (preferably from three to six, more preferably from three to five, most preferably four) hydroxyl groups per molecule; and from 25 to 90% by weight (preferably from 35 to 90% by weight, more preferably from 40 to 75% by weight, most preferably from 50 to 65% by weight) of a mass polyol hardener. high molecular weight having a number average molecular weight, MN, of 2,000 to 100,000 (preferably 2,500 to 100,000, more preferably 5,000 to 50,000, more preferably 7,500 to 15,000) and an average from three to ten (preferably from four to eight, more preferably from five to seven, most preferably six) hydroxyl groups per molecule. The polishing layer of the electrochemical polishing felt of the present invention has a polishing surface adapted to polish a substrate. The polishing surface is preferably adapted to polish a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate. The polishing surface is even more suitable for polishing a semiconductor substrate.
    [0009] The polishing surface preferably has a macrotexture selected from at least one of perforations and grooves. The perforations may extend from the polishing surface partially or all through the thickness of the polishing layer. The grooves are preferably disposed on the polishing surface so that upon rotation of the chemical mechanical polishing felt during polishing, at least one groove sweeps the surface of the substrate which is polished. The polishing surface preferably has a macro-texture comprising at least one groove selected from the group consisting of curved grooves, linear grooves and combinations thereof. The polishing layer of the chemical mechanical polishing felt of the present invention preferably has a polishing surface adapted to polish the substrate, wherein the polishing surface has a macro-texture comprising a pattern of grooves formed therein. The groove pattern preferably comprises a plurality of grooves. The groove pattern is even better selected from a groove design. The groove design is preferably selected from the group consisting of concentric grooves (which may be circular or helical), curved grooves, hatched grooves (for example arranged as an XY grid across the felt surface), others regular designs (eg hexagons, triangles), tire tread type patterns, irregular designs (fractal patterns), and combinations thereof. The groove design is even more preferred in the group consisting of arbitrary grooves, concentric grooves, helical grooves, hatched grooves, XY grid grooves, hexagonal grooves, triangular grooves, fractal grooves, and combinations of those -this. The polishing surface even more preferably has a helical groove pattern formed therein. The groove profile is preferably selected from a rectangular profile with straight side walls or the cross section of grooves may be "V" shaped, "U" shaped, sawtooth, and combinations thereof. The isocyanate-terminated urethane prepolymer used in the formation of the chemical-mechanical polishing felt end point window of the present invention preferably comprises: an ingredient reaction product comprising a polyfunctional isocyanate and a polyol prepolymer. The polyfunctional isocyanate used in the preparation of the isocyanate-terminated urethane prepolymer is preferably selected from the group consisting of aliphatic polyfunctional isocyanates, polyfunctional aromatic isocyanates, and mixtures thereof. The polyfunctional isocyanate used is even better a diisocyanate selected from the group consisting of 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; 4,4'-diphenylmethane diisocyanate; naphthalene-1,5-diisocyanate; tolidine diisocyanate; para-phenylene diisocyanate; xylylene diisocyanate; isophorone diisocyanate; hexamethylene diisocyanate; 4,4'-dicyclohexylmethane diisocyanate; cyclohexane diisocyanate; and mixtures thereof. The polyfunctional isocyanate used is even better a diisocyanate selected from the group consisting of 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; and mixtures thereof. The prepolymer polyol used in the preparation of the isocyanate-terminated urethane prepolymer is preferably selected from the group consisting of diols, polyols, polyol diols, copolymers thereof, and mixtures thereof. The prepolymer polyol is even more preferably selected from the group consisting of polyether polyols (for example poly (oxytetramethylene) glycol, poly (oxypropylene) glycol, poly (oxyethylene) glycol); polycarbonate polyols; polyesters polyols; polycaprolactones polyols; mixtures of these; and mixtures thereof with one or more low molecular weight polyols selected from the group consisting of ethylene glycol; 1,2-propylene glycol; 1,3-propylene glycol; 1,2-butanediol; 1,3-butanediol; 2-methyl-1,3-propanediol; 1,4-butanediol; neopentyl glycol; 1,5-pentanediol; 3-methyl-1,5-pentanediol; 1,6-hexanediol; diethylene glycol; dipropylene glycol; and, tripropylene glycol. The prepolymer polyol is more preferably selected from the group consisting of at least one of polytetramethylene ether glycol (PTMEG); polypropylene ether glycols (PPG) and polyethylene ether glycols (PEG); optionally mixed with at least one low molecular weight polyol selected from the group consisting of ethylene glycol; 1,2-propylene glycol; 1,3-propylene glycol; 1,2-butanediol; 1,3-butanediol; 2-methyl-1,3-propanediol; 1,4-butanediol; neopentyl glycol; 1,5-pentanediol; 3-methyl-1,5-pentanediol; 1,6-hexanediol; diethylene glycol; dipropylene glycol; and tripropylene glycol. The prepolymer polyol further comprises PPG mixed with at least one of ethylene glycol; 1,2-propylene glycol; 1,3-propylene glycol; 1,2-butanediol; 1,3-butanediol; 2-methyl-1,3-propanediol; 1,4-butanediol; neopentyl glycol; 1,5-pentanediol; 3-methyl-1,5-pentanediol; 1,6-hexanediol; diethylene glycol; dipropylene glycol; and, tripropylene glycol. The isocyanate-terminated urethane prepolymer used in the formation of the limit point detection window of the chemical mechanical polishing felt of the present invention preferably contains an average of two reactive isocyanate groups (i.e., NCO) per molecule. The isocyanate-terminated urethane prepolymer used in the formation of the end point detection window of the chemical mechanical polishing felt of the present invention has from 2 to 6.5% by weight (preferably from 3 to 6% by weight). and still more preferably from 5 to 6% by weight, most preferably from 5.5 to 6% by weight of unreacted NCO groups. The isocyanate-terminated urethane prepolymer used in the formation of the end point detection window of the chemical-mechanical polishing felt of the present invention is preferably a low free isocyanate-terminated urethane prepolymer having a monomer content of toluene diisocyanate (TDI) free less than 0.1% by weight. Examples of commercially available PTMEG-based isocyanate-terminated urethane prepolymers include Imuthane® prepolymers (available from COIM USA, Inc., such as PET-80A, PET-85A, PET-90A, PET-93A, PET-95A, PET-60D, PET-70D, PET-75D); Adiprene® prepolymers (available from Chemtura, such as LF 800A, LF 900A, LF 910A, LF 930A, LF 931A, LF 939A, LF 950A, LF 952A, LF 600D, LF 601D, LF 650D, LF 667, LF 700D, LF 750D, LF751D, LF752D, LF753D and L325); Andur® prepolymers (available from Anderson Development Company, such as 70APLF, 80APLF, 85APLF, 90APLF, 95APLF, 60DPLF, 70APLF, 75APLF). Examples of commercially available PPG-based isocyanate-terminated urethane prepolymers include Imuthane® prepolymers (available from COIM USA, Inc., such as PPT-80A, PPT-90A, PTT-95A, PPT-65D , PPT-75D); Adiprene® prepolymers (available from Chemtura, such as LFG 963A, LFG 964A, LFG 740D); and, Andur® prepolymers (available from Anderson Development Company, such as 8000APLF, 9500APLF, 650DPLF, 75050DPLF). It is also possible to use isocyanate-terminated urethane prepolymers which are not based on TDI. Isocyanate-terminated urethane prepolymers including, for example, those formed by the reaction of 4,4'-diphenylmethane diisocyanate (MDI) and polyols, such as polytetramethylene glycol (PTMEG) with optional diols, such as 4-butanediol (BDO) are acceptable. When using such isocyanate-terminated urethane prepolymers, the unreacted isocyanate (NCO) concentration is preferably from 4 to 10% by weight (more preferably from 4 to 8% by weight, much better Still 5 to 7% by weight). Examples of commercially available isocyanate-terminated urethane prepolymers in this class include Imuthane® prepolymers (available from COIM USA, Inc., such as 27-85A, 27-90A, 27-95A); Andur® prepolymers (available from Anderson Development Company, such as IE75AP, IE80AP, IE85AP, IE90AP, IE95AP, IE98AP); and, Vibratane® prepolymers (available from Chemtura, such as B625, B635, B821). The difunctional hardener used in forming the limit point detection window of the chemical mechanical polishing felt of the present invention is preferably selected from diols and diamines. The difunctional hardener is even more preferably a difunctional aromatic hardener selected from the group consisting of diethyltoluenediamine (DETDA); 3,5-dimethylthio-2,4-toluenediamine and isomers thereof; 3,5-diethyltoluene-2,4-diamine and isomers thereof (e.g., 3,5-diethyltoluene-2,6-diamine); 4,4'-bis (sec-butylamino) diphenyl methane; 1,4-bis (sec-butylamino) benzene; 4,4'-methylene-bis- (2-chloroaniline); 4,4'-methylene-bis- (3-chloro-2,6-diethylaniline) (MCDEA); poly (tetramethylene oxide) di-p-aminobenzoate; N, N'-dialkyldiaminodiphenylmethane; p, p'-methylenedianiline (MDA); m-phenylenediamine (MPDA); 4,4'-methylene-bis- (2-chloroaniline) (MBOCA); 4,4'-methylene-bis- (2,6-diethylaniline) (MDEA); 4,4'-methylene-bis- (2,3-dichloroaniline) (MDCA); 4,4'-diamino-3,3'-diethyl-5,5'-dimethyldiphenylmethane; 2,2 ', 3,3'-tetrachlorodiaminodiphenylmethane; trimethylene glycol di-p-aminobenzoate; and mixtures thereof. The difunctional aromatic hardener used is most preferably selected from the group consisting of 4,4'-methylene-bis- (2-chloroaniline) (MBOCA); 4,4'-methylenebis (3-chloro-2,6-diethylaniline) (MCDEA); and isomers thereof. The difunctional aromatic hardener used is still more preferably 4,4'-methylene-bis- (2-chloroaniline) (MBOCA). The amine-initiated polyol curing agent used in the formation of the chemical-mechanical polishing felt end point window of the present invention contains at least one nitrogen atom (preferably one to four carbon atoms). nitrogen, still more preferably two to four nitrogen atoms, still more preferably two nitrogen atoms) per molecule and an average of at least three (preferably three to six, more preferably three to five, most preferably still four) hydroxyl groups per molecule. The amine-initiated polyol curative used in the formation of the chemical-mechanical polishing-off felt end point window of the present invention preferably has a number average molecular weight, MN, <700 (most preferably from 150 to 650, more preferably from 200 to 500, particularly preferably from 250 to 300). The amine-initiated polyol curing agent used in forming the boundary point detection window of the chemical mechanical polishing felt of the present invention preferably has a hydroxyl number (as determined by the ASTM test method D4274-11). ) from 350 to 1200 mg KOH / g (more preferably from 400 to 1000 mg KOH / g, more preferably from 600 to 850 mg KOH / g). Examples of commercially available amine-initiated polyol curatives include the Voranol family of amine-initiated polyols (available from The Dow Chemical Company); Quadrol® Specialty Polyols (N, N, N ', N'-tetrakis (2-hydroxypropylethylenediamine)) (available from BASF); Plucarol® amine-based polyols (available from BASF); Multranol® amine-based polyols (available from Bayer MaterialScience LLC); triisopropanolamine (TIPA) (available from The Dow Chemical Company); and triethanolamine (TEA) (available from Mallinckrodt Baker Inc.). Many preferred amine-initiated polyol curatives are listed in TABLE 1. TABLE 1 Polyol Hardener Initiated by MN Number Hydroxyl Number One amine OH groups per (mg KOH / g) molecule Triethanolamine 3 149 1130 Triisopropanolamine 3 192 877 Polyol MULTRANOL® 9138 3 240 700 Polyol MULTRANOL® 9170 3 481 350 Polyol VORANOL® 391 4 568 391 Polyol VORANOL® 640 4 352 638 Polyol VORANOL® 800 4 280 801 Polyol QUADROL® 4 292 770 Polyol MULTRANOL® 4050 4 356 630 Polyol MULTRANOL ® 4063 4 488 460 Polyol MULTRANOL® 8114 4 568 395 Polyol MULTRANOL® 8120 4 623 360 Polyol MULTRANOL® 9181 4 291 770 Polyol VORANOL® 202 5 590 475 Without wishing to be bound by theory, in addition to promoting the desired balance of physical properties of the boundary point detection window produced with these, it is believed that the concentration of the amine-initiated polyol hardener used in the hardener system also acts for self-catalyzing The reaction and the reaction of any difunctional hardener in the hardener system with the unreacted isocyanate groups (NCO) present in the isocyanate-terminated urethane prepolymer.
    [0010] The high molecular weight polyol hardener used in the formation of the chemical-mechanical polishing felt boundary point window of the present invention preferably has a number average molecular weight, MN, of 2,000 to 100,000 ( still more preferably from 2,500 to 100,000, still more preferably from 5,000 to 50,000, particularly preferably from 7,500 to 15,000). The high molecular weight polyol hardener used in the formation of the chemical mechanical polishing felt boundary point window of the present invention preferably has an average of three to ten (even more preferably four to eight, much better still five to seven, particularly preferably six) hydroxyl groups per molecule. The high molecular weight polyol hardener used in the formation of the chemical-mechanical polishing felt boundary point window of the present invention preferably has a number average molecular weight, MN, which is greater than the molecular weight. number average, MN, of the amine initiated polyol hardener used in the hardener system; and, has a hydroxyl number which is less than the hydroxyl number of the amine initiated hardener used in the hardener system. Examples of commercially available high molecular weight polyol hardeners include Specflex® polyols, Voranol® polyols, and Voralux® polyols (available from The Dow Chemical Company); Multranol® Specialty Polyols and Ultracel® Flexible Polyols (available from Bayer MaterialScience LLC); and Plucarol® Polyols (available from BASF). Many preferred high molecular weight polyol curatives are listed in TABLE 2.30 TABLE 2 Mass Polyol Hardener Number of MN High Molecular Hydroxyl Number OH Groups by (mg KOH / g) Molecular Polyol Moltranol® 3901 3.0 6,000 28 Polyol Pluracol® 1385 3,0 3,200 50 Polyol Pluracol® 380 3,0 6,500 25 Polyol Pluracol® 1123 3,0 7,000 24 Polyol ULTRACEL® 3000 4,0 7,500 30 Polyol SPECFLEX® NC630 4,2 7,602 31 Polyol SPECFLEX® NC632 4 , 7 8,225 32 Polyol VORALUX® HF 505 6,0 11,400 Polyol MULTRANOL® 9185 6,0 3,366 100 Polyol VORANOL® 4053 6,9 12,420 31 The sum of the reactive hydrogen groups (ie the sum of the groups amine (NH2) and hydroxyl (OH) groups contained in the components of the isocyanate-divided (NCO) divided hardener system in the isocyanate-terminated urethane prepolymer (i.e. the stoichiometric ratio) used in the formation of the window of The point detection of the chemical mechanical polishing felt of the present invention is preferably 0.7 to 1.2 (preferably 0.8 to 1.10; still more preferably from 0.95 to 1.05; much better still 0.98 to 1.02). The chemical-mechanical polishing felt boundary point detection window of the present invention preferably has a density of> 1 g / cc (preferably 1.05 to 1.2 g / cc, more preferably 1.1 at 1.2 g / cm 3, more preferably 1.1 to 1.15 g / cm 3); porosity less than 0.1% by volume; a Shore D hardness of 10 to 50 (preferably 15 to 45, more preferably 20 to 40, most preferably 25 to 35); and elongation at break <400% (preferably 150 to 400%, more preferably 200 to 400%, most preferably 250 to 400%). The chemical-mechanical polishing felt boundary point detection window of the present invention preferably has a double-pass transmission at 800 nm (DPT800) of 30 to 100% (preferably 30 to 85%, more preferably 50 to 80%). at 85%, more preferably 60 to 85%) measured under the conditions given here in the examples. The chemical-mechanical polishing felt boundary point detection window of the present invention preferably has a DPT800 of 30 to 100% (preferably 30 to 85%, more preferably 50 to 85%, and most preferably 60 to 85%). at 85%) measured under the conditions given here in the examples; and a 400 nm double pass transmission, DPT400, of 25 to 100% (preferably 25 to 85%, more preferably 40 to 85%, most preferably 45 to 85%) measured under the conditions given herein. in the examples. The chemical mechanical polishing felt of the present invention is preferably adapted to be assembled to a disk of a polishing machine. The chemical mechanical polishing felt is preferably adapted to be attached to the disk of the polishing machine. The chemical mechanical polishing felt may preferably be attached to the disk using at least one of a pressure sensitive adhesive and vacuum. The chemical mechanical polishing felt of the present invention preferably further comprises a pressure sensitive disc adhesive to facilitate audible fixation. Those skilled in the art will know how to choose a pressure sensitive adhesive suitable for use as the pressure sensitive disc adhesive. The chemical mechanical polishing felt of the present invention will also preferably include a detachable liner applied to the pressure sensitive disc adhesive.
    [0011] The chemical-mechanical polishing felt of the present invention optionally further comprises at least one additional layer connected to the polishing layer. The method of manufacturing a chemical mechanical polishing felt of the present invention comprises: providing a polishing layer having a polishing surface; providing an isocyanate-terminated urethane prepolymer having from 2 to 6.5% by weight (preferably from 3 to 6% by weight, more preferably from 5 to 6% by weight, and most preferably from 5 to 6% by weight); 5-6% by weight) of unreacted NCO groups; providing a hardener system comprising: at least 5% by weight (preferably 5 to 70% by weight, more preferably 10 to 60% by weight, more preferably 20 to 40% by weight), a hardener, preferably aromatic, difunctional; at least 5% by weight (preferably 5 to 25% by weight, more preferably 5 to 20% by weight, more preferably 5 to 15% by weight) of an amine initiated polyol curative having at least one nitrogen atom (preferably one to four atoms, more preferably two to four nitrogen atoms, more preferably two nitrogen atoms) per molecule and an average of at least three (preferably three to six) still more preferably from three to five, most preferably four) hydroxyl groups per molecule; and from 25 to 90% by weight (preferably from 35 to 90% by weight, more preferably from 40 to 75% by weight, most preferably from 50 to 65% by weight) of a molecular weight polyol hardener. having a number average molecular weight, MN, of 2,000 to 100,000 (preferably 2,500 to 100,000, more preferably 5,000 to 50,000, more preferably 7,500 to 15,000) and a mean of from three to ten (preferably from four to eight, more preferably from five to seven, most preferably six) hydroxyl groups per molecule; combining the isocyanate-terminated urethane prepolymer and the hardener system to form a combination; let it react from the combination to form a product; forming a limit point detection window from the product; assembling the limit point detection window to the polishing layer to provide a chemical mechanical polishing felt. The limit point detection window is preferably connected to the polishing layer as an integral window incorporated in the polishing layer using known techniques, or as a plug-in-place window incorporated in the chemical mechanical polishing felt using known techniques. The boundary detection window is even better incorporated into the polishing layer as an integral window. An important step in the substrate polishing operations is the determination of a process end point. A conventional in situ method for limit point detection involves providing a polishing felt with a window, which is transparent to select wavelengths of light. A beam of light is during the polishing directed through the window to the wafer surface, where it is reflected and passes back through the window to a detector (eg a spectrophotometer). On the basis of the feedback signal, properties of the substrate surface (e.g. film thickness on its top) can be determined for the detection of the limit point. In order to facilitate such limit-point methods on the basis of light, the chemical-mechanical polishing felt of the present invention includes a limit-point detection window. The limit point detection window is preferably selected from an integral window incorporated in the polishing layer; and, a cap-in-place endpoint detection window block incorporated in the chemical mechanical polishing felt. Those skilled in the art will be able to choose a suitable method for incorporating the end point detection window into the chemical mechanical polishing felt. The method of the present invention for mechano-chemical polishing of a substrate comprises: providing a chemical mechanical polishing apparatus having a disk, a light source and a photosensor (preferably a multi-detector spectrograph); providing at least one substrate to be polished (wherein the substrate is preferably selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate; wherein the substrate is even better a substrate semiconductor, where the substrate is much better still a semiconductor wafer); providing a chemical mechanical polishing felt of the present invention; the installation on the disk of the chemical-mechanical polishing felt; optionally, providing a polishing medium at an interface between a polishing surface of the chemical mechanical polishing felt and the substrate (wherein the polishing medium is preferably selected from the group consisting of a polishing slurry and a a reactive liquid formulation containing no abrasive); creating a dynamic contact between the polishing surface and the substrate, wherein at least a certain amount of material is removed from the substrate; and, determining a polishing boundary point by transmitting light from the light source through the boundary point detection window and analyzing the light reflected from the surface of the substrate back through the limit point detection window incident on the photosensor. The polishing boundary point is preferably determined based on an analysis of a wavelength of light reflected from the surface of the substrate and transmitted through the boundary point detection window, where the present wavelength is a wavelength> 370 nm to 800 nm. The polishing limit point is further best determined on the basis of multiple wavelength analysis of light reflected from the surface of the substrate and transmitted through the boundary point detection window, where one of the lengths of analyzed wave has a wavelength> 370 nm at 800 nm. Some embodiments of the present invention will now be described in detail in the following examples.
    [0012] Comparative Examples C1-C23 and Examples 1-12 Limit point detection windows were prepared according to the formulation details provided in TABLE 3. The window prepolymer was mixed with the components of the curative system using a vortex mixer at 1000 rpm for 30 seconds. All the raw materials with the exception of the difunctional hardener (i.e., MBOCA and MCDEA) were maintained at a pre-mixing temperature of 60 ° C. MBOCA and MCDEA were maintained, when used, at a pre-mixing temperature of 120 ° C. The stoichiometric ratio between the window prepolymer and the hardener system used for the endpoint detection windows is provided in TABLE 3 as the ratio of the reactive hydrogen groups (i.e., the sum of the -OH and -NH2 groups) in the hardener system relative to the unreacted isocyanate NCO groups in the isocyanate-terminated urethane prepolymer. In each of the examples, the isocyanate-terminated urethane prepolymer and hardener system were mixed together using a high shear mixing head. After the release of the mixing head, the combination was dispensed into a 2 mm x 125 mm x 185 mm pocket mold. The pocket mold with the dispensed combination was then cured in an oven for eighteen (18) hours. The set point temperature for the oven was initially set at 93 ° C for the first twenty (20) minutes; at 104 ° C for the next fifteen (15) hours and forty (40) minutes; and was then lowered to 21 ° C during the final two (2) hours. The pocket mold and its contents were then removed from the oven and the produced end-point detection window was then removed from the pocket mold.
    [0013] TABLE 3 Ex No. Prepolymer (% NCO Hardener System) Hardener Pi Hardener P2 Hardener P3 Hardener P4 (H active / aromatic (% MW) (% initiated by a (% non-amine (% NCO) (P1 ) weight) high (P2) weight) amine (P3) weight (P4) weight) stoichiometric Cl A 6.67 MbOCA 14.20 H 73.41 J 12.39 - - 1.0 C2 A 6 , 67 MbOCA 12.39 H 75.22 J 12.39 - - 1.0 C3 A 6.70 MbOCA 14.16 H 73.49 J 12.35 - - 1.0 C4 A 6.70 MbOCA 33.33 H 57.25 J 9.42 - - 1.0 C5 C 8.88 MbOCA - H 85.62 J 14.38 - - 1.0 C6 C 8.88 MbOCA - I 85.78 J 14.22 - - 1.0 C7 B 5.72 MbOCA - H 85.84 J 14.16 - - 1.0 C8 D 8.94 MbOCA - H 85.68 J 14.32 - - 1.0 C9 D 8.94 MbOCA - I 85.82 J 14.18 - - 1.0 C10 A 6.67 MCDEA - I 85.59 J 14.41 - - 1.0 Cil A 6.70 MbOCA - H 85.68 J 14.32 - - 1.0 C12 G 4.15 MbOCA 100 - - - - - - 1 , 0 C13 B 5.83 MbOCA 100 - - - - - 1.0 C14 E 2.86 MbOCA 100 - - - - - 1.0 C15 F 3.80 MbOCA 100 - - - - - - 1.0 C16 B 5.83 MbOCA 14.26 H 85.74 - - - - 1.0 C17 B 5.83 MbOCA 14.25 I 85.75 - - - - 1.0 C18 B 5.72 MbOCA 14.38 H 73.44 - - K 12.18 1.0 C19 B 5.72 MbOCA 33.33 H 56.98 - - K 9.69 1.0 C20 A 6.67 MbOCA 14.29 H 85.71 - - - - 1.0 C21 A 6 67 MbOCA 14.29 I 85.71 - - - - 1.0 C22 A 6.70 MbOCA 14.37 H 73.52 - - K 12.11 1.0 C23 A 6.70 MbOCA 33.22 H 57.09 - - K 9.69 1.0 1 B 5.83 MbOCA 14.24 H 73.51 J 12.25 1.0 2 B 5.83 MbOCA 14.15 H 73, 54 J 12,31 - - 1,0 TABLE 3 (CONT'D) Ex n ° Prepolymer (% Hardener P1 Hardener P2 Hardener P3 Hardener P4 (H active / NCO) aromatic (% in MW (% initiated by one ( % non-amine (% NCO) (P1) weight) high (P2) weight) amine (P3) weight (P4) weight stoichiometric 3 B 5.72 MbOCA 14.38 H 73.24 J 12 , 38 - 1.0 4 B 5.72 MbOCA 33.33 H 57.32 J 9.35 - 1.0 5 B 5.83 MbOCA 14.24 H 73.51 J 12.25 - - 1.06 B 5.83 MbOCA 14.24 H 77.15 J 8.61 - - 0.84 7 B 5.83 MCDEA 14.29 H 79.12 J 6.59 - - 1 0 8 B 5.83 MbOCA 21.94 H 66.91 J 11.15 - - 1.0 9 B 5.83 MbOCA 31.76 H 58.43 J 9.8 1 - - 1.0 B 5.83 MbOCA 43.67 H 48.47 D 7.86 - 1.0 11 B 5.83 MbOCA 58.33 H 35.78 J 5.89 - - 1.0 12 B 5.83 MbOCA 14.24 H 79.14 J 6.62 - - 0.76 A is the Adiprene® LF667 isocyanate-terminated urethane prepolymer comprising a combination of 50/50 percent by weight Adiprene® LF950A and Adiprene® LF600D available from Chemtura. B is the Adiprene® LFG963A isocyanate-terminated urethane prepolymer available from Chemtura Corporation. This is the Adiprene® LFG740D isocyanate-terminated urethane prepolymer available from Chemtura Corporation. D is the Adiprene® LFG750D isocyanate-terminated urethane prepolymer available from Chemtura Corporation. E is the Adiprene® LF800A isocyanate-terminated urethane prepolymer available from Chemtura Corporation. F is the Adiprene® LF900A isocyanate-terminated urethane prepolymer available from Chemtura Corporation. G is the TDI-terminated prepolymer based on Vibrathane® B628 polyether available from Chemtura Corporation. H is the high molecular weight polyol hardener Voralux® HF505 having a number average molecular weight, MN, of 11,400 and an average of six hydroxyl groups per molecule available from The Dow Chemical Company. I is polytetramethylene ether glycol having a number average molecular weight, MN, of 2,000 and an average of two hydroxyl groups per molecule available from Sigma-Aldrich. J is the Voranol® 800 amine-initiated polyol curing agent having a number average molecular weight, MN, of 280 and an average of four hydroxyl groups per molecule available from The Dow Chemical Company.
    [0014] K is the non-Voranol 230-660 amine-containing polyol hardener having a number average molecular weight, MN, of 255 and an average of three hydroxyl groups per molecule available from The Dow Chemical Company.
    [0015] Terminal point detection windows prepared according to each of the comparative examples C1-C23 and Examples 1-12 were analyzed to determine the physical properties as listed in TABLE 4.
    [0016] The DPT400 and DPT800 transmission data quoted for the endpoint detection windows were determined using the following equation: DPT = (IW51-IWD) (IA5; IAD) where IW5 ;, IWD, IA9, and IAD are measured using a Verity SP2006 Spectral Interferometer comprising an SD1024F spectrograph, a xenon flash lamp, and a 3mm optical fiber cable by placing a light emitting surface of the 3mm optical fiber cable against (and perpendicular to) a first face of the boundary point detection window at a point of origin, directing the light at a given wavelength (i.e. at 400 nm and 800 nm respectively) through the thickness, Tw, from the window and measuring at the point of origin the light intensity of the given wavelength reflected back through the thickness of the window, Tw, from a surface disposed against a second face of the limit point detection window ensibly parallel to the first face; where IW51 is a measure of the intensity of light at the given wavelength that passes through the window from the point of origin and is reflected from the surface of a silicon control wafer placed against a second face of the window back through the window to the point of origin; where IWD is a measure of the intensity of light at the given wavelength that passes from the point of origin through the window and is reflected from the surface of a black body and back through the window to the point of origin; where IA5; is a measure of the light intensity at the given length that passes from the point of origin through an air thickness equivalent to the thickness, Tw, of the endpoint detection window, which is reflected at from the surface of a silicon control wafer placed perpendicular to the light emitting surface of the 3 mm optical fiber cable and which is reflected back through the air thickness to the point of origin; and, where IAD is a measure of the intensity of light at the given wavelength reflected from a black body on the light emitting surface of the 3 mm optical fiber cable. The density data cited for the endpoint detection windows were determined according to ASTM D1622.
    [0017] The Shore D hardness data cited for the endpoint detection windows were determined according to ASTM D2240. The tensile properties of the endpoint detection windows (i.e. tensile strength and elongation at break) were measured according to ASTM D1708-10 using an Alliance RT / 5 mechanical testing device available from MTS Systems Corporation as a crosshead speed of 2.54 cm / min. The entire test of tensile properties was carried out in a temperature and humidity controlled laboratory set at 23 ° C and a relative humidity of 50%. All test samples were packaged under the laboratory conditions cited for 5 days prior to testing. The tensile strength (MPa) and elongation at break (%) quoted for each endpoint detection window material were determined from tension-strain curves of four duplicate samples. TABLE 4 Ex. No. Properties DPT Density Hardness Resistance Elongation at (in%) at (g / cm3) Shore D tensile breaking (%) (15s) (MPa) 400 nm 800 nm Cl 0 0 1.11 17 8.38 426 C2 0 0 1,10 24 8,56 279 C3 2 1 1,09 6 3,55 287 C4 0 18 1,08 22 9,78 306 C5 0 0 1,07 10 2,81 131 C6 0 0 1,08 14 6,70 223 C7 16 41 1,08 14 2,48 160 C8 0 0 1,11 12 6,02 199 C9 0 0 1,07 10 8,18 345 C10 0 9 1,06 17 2,17 146 C11 1 0 1.07 6 2.91 262 C12 38 68 1.13 32 18.68 807 C13 8 64 1.13 55 24.94 492 C14 48 70 1.06 28 12.22 768 C15 26 53 1.08 38 27.32 860 C16 0 0 1.10 24 7.58 362 C17 0 1.07 9 1.82 145 C18 0 4 1.10 23 6.30 284 C19 0 31 1.11 32 12.22 404 C20 0 0 1,08 29 8,96 337 C21 0 0 1,07 14 2,89 517 C22 0 10 1,09 28 7,08 247 C23 0 8 1,09 36 15.08 353 1 55 70 1.12 21 6,30 242 2 38 61 1,07 26 6,63 196 3 44 70 1,10 15 5,19 281 4 37 66 1,10 25 11,05 390 42 59 1,11 24 7,21 248 6 25 68 1,12 29 6,98 152 7 50 61 1,13 23 6,88 243 8 51 70 1,11 28 6,30 255 9 50 75 1,12 34 9,77 328 47 74 1,13 38 12 98 379 11 32 68 1.13 42 14.50 356 12 22 54 1.12 28 5.79 146
    权利要求:
    Claims (10)
    [0001]
    REVENDICATIONS1. A chemical mechanical polishing felt characterized in that it comprises: a polishing layer having a polishing surface; and, a limit point detection window; wherein the endpoint detection window comprises an ingredient reaction product, comprising: an isocyanate-terminated urethane prepolymer having from 2 to 6.5% unreacted NCO groups; and, a hardener system, comprising: at least 5% by weight of a difunctional hardener; at least 5% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; and from 25 to 90% by weight of a high molecular weight polyol hardener having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule.
    [0002]
    The chemical mechanical polishing mat according to claim 1, characterized in that the polishing surface is adapted to polish a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate. driver.
    [0003]
    A chemical mechanical polishing pen according to claim 1, characterized in that the hardener system has a plurality of reactive hydrogen groups and the isocyanate-terminated urethane prepolymer has a plurality of unreacted NCO groups; and wherein a stoichiometric ratio of reactive hydrogen groups to unreacted NCO groups is 0.7 to 1.2.
    [0004]
    4. The chemical mechanical polishing felt according to claim 1, characterized in that the limit point detection window has a density> 1 g / cm3; porosity less than 0.1% by volume; a Shore D hardness of 10 to 50; an elongation at break <400%, and a double pass transmission at 800 nm, DPT800, of 30 to 100%.
    [0005]
    A chemical mechanical polishing felt according to claim 4, characterized in that the boundary point detection window also has a 400 nm double pass transmission, DPT400, of 25 to 100 ° A).
    [0006]
    The chemical mechanical polishing felt according to claim 2, characterized in that the polishing surface has a pattern of heliocidal grooves formed therein.
    [0007]
    7. A method of manufacturing a chemical-mechanical polishing felt according to claim 1, characterized in that it comprises: providing a polishing layer having a polishing surface; providing an isocyanate-terminated urethane prepolymer having from 2 to 6.5% by weight of unreacted NCO groups; providing a hardener system, comprising: at least 5% by weight of a hardener, preferably aromatic, difunctional; at least 5% by weight of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least 3 hydroxyl groups per molecule; from 25 to 90% by weight of a high molecular weight polyol hardener having a number average molecular weight, MN, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule; combining the isocyanate-terminated urethane prepolymer and the hardener system to form a combination; let it react from the combination to form a product; forming a limit point detection window from the product; assembling the limit point detection window to the polishing layer to provide a chemical mechanical polishing felt.
    [0008]
    8. Method according to claim 7, characterized in that the limit point detection window is an integral window.
    [0009]
    A method of polishing a substrate, characterized in that it comprises: providing a chemical mechanical polishing apparatus having a disk, a light source and a photosensor; providing at least one substrate; providing a chemical mechanical polishing felt according to claim 1; the installation on the disk of the chemical-mechanical polishing felt; optionally, providing a polishing medium at an interface between the polishing surface and the substrate; creating a dynamic contact between the polishing surface and the substrate, wherein at least a certain amount of material is removed from the substrate; and, determining a polishing boundary point by transmitting light from the light source through the boundary point detection window and analyzing the light reflected from the surface of the substrate back through the limit point detection window incident on the photosensor.
    [0010]
    10. The method of claim 9, characterized in that the at least one substrate is selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate.
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    同族专利:
    公开号 | 公开日
    CN104942701B|2018-01-30|
    CN104942701A|2015-09-30|
    KR20150112855A|2015-10-07|
    US20150273651A1|2015-10-01|
    JP6487248B2|2019-03-20|
    JP2015189001A|2015-11-02|
    FR3019075B1|2018-11-23|
    US9216489B2|2015-12-22|
    DE102015003241A1|2015-10-01|
    TWI583490B|2017-05-21|
    TW201601876A|2016-01-16|
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    法律状态:
    2016-02-08| PLFP| Fee payment|Year of fee payment: 2 |
    2017-02-13| PLFP| Fee payment|Year of fee payment: 3 |
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    2018-04-13| PLSC| Publication of the preliminary search report|Effective date: 20180413 |
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    2021-02-10| PLFP| Fee payment|Year of fee payment: 7 |
    2022-02-09| PLFP| Fee payment|Year of fee payment: 8 |
    优先权:
    申请号 | 申请日 | 专利标题
    US14/228,613|US9216489B2|2014-03-28|2014-03-28|Chemical mechanical polishing pad with endpoint detection window|
    US14228613|2014-03-28|
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